Superconductivity of MgB_2 Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate

• Authors: Z. Trybuła , W. Kempiński , Sz. Łoś , K. Kaszyńska , M. Trybuła , J. Piekoszewski , Z. Werner , M. Barlak
• Languages of publication: EN

Abstracts

EN

The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).

Keywords

EN

74.70.-b; 74.78.-w

Discipline

• 74.78.-w: Superconducting films and low-dimensional structures
• 74.70.-b: Superconducting materials other than cuprates(for cuprates, see 74.72.-h; for superconducting films, see 74.78.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 2
• Pages: 323-325

Dates

published

2010-08

Contributors

author

Z. Trybuła

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland

author

W. Kempiński

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland

author

Sz. Łoś

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland

author

K. Kaszyńska

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland

author

M. Trybuła

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland

author

J. Piekoszewski

• The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

Z. Werner

• The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

M. Barlak

• The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

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Identifiers

DOI

10.12693/APhysPolA.118.323