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2010 | 118 | 2 | 323-325
Article title

Superconductivity of MgB_2 Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate

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EN
Abstracts
EN
The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).
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EN
Contributors
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 61-179 Poznań, Poland
  • The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
author
  • The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
author
  • The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n222kz
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