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2010 | 117 | 1 | 248-250
Article title

The Current Phenomenon in the Indium-Tin Oxide-Alignment Layer-Liquid Crystal Structure

Content
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Languages of publication
EN
Abstracts
EN
This work is connected to investigation of frequency dependences of conductive value and dielectric conductivity of the indium-tin oxide-alignment layer-liquid crystal structure which allows to find new ways in formation of the electrically stabilized structure of liquid crystal materials for the optoelectronic devices.
Keywords
EN
Contributors
author
  • Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
  • Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
  • Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
  • Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
  • Lviv Polytechnic National University, 79013 Lviv, Ukraine
References
  • 1. Pat. No. u 2008625 Ukraine, G02F 1/13. The method of making of integral microelectronic solid-state device/Hotra Z. [et al.]: assigned to Lviv Polytechnic National University, date of patent: December 29 (2008)
  • 2. Ya. Nastishin, O. Dovgyj, O. Vlokh, Ukr. J. Phys. Opt. 3, 98 (2002)
  • 3. I. Guralnik, V. Belopuhov, G. Love, A. Naumov, J. Appl. Phys. 87, 4069 (2000)
  • 4. H. Naito, Y. Yokoyama, S. Murakami, M. Imai, M. Okuda, A. Sugimura, Mol. Cryst. Liq. Cryst. 262, 249 (1995)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv117z151kz
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