Journal
Article title
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Abstracts
This work is connected to investigation of frequency dependences of conductive value and dielectric conductivity of the indium-tin oxide-alignment layer-liquid crystal structure which allows to find new ways in formation of the electrically stabilized structure of liquid crystal materials for the optoelectronic devices.
Discipline
Journal
Year
Volume
Issue
Pages
248-250
Physical description
Dates
published
2010-01
Contributors
author
- Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
- Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
- Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
- Lviv Polytechnic National University, 79013 Lviv, Ukraine
author
- Lviv Polytechnic National University, 79013 Lviv, Ukraine
References
- 1. Pat. No. u 2008625 Ukraine, G02F 1/13. The method of making of integral microelectronic solid-state device/Hotra Z. [et al.]: assigned to Lviv Polytechnic National University, date of patent: December 29 (2008)
- 2. Ya. Nastishin, O. Dovgyj, O. Vlokh, Ukr. J. Phys. Opt. 3, 98 (2002)
- 3. I. Guralnik, V. Belopuhov, G. Love, A. Naumov, J. Appl. Phys. 87, 4069 (2000)
- 4. H. Naito, Y. Yokoyama, S. Murakami, M. Imai, M. Okuda, A. Sugimura, Mol. Cryst. Liq. Cryst. 262, 249 (1995)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv117z151kz