The Current Phenomenon in the Indium-Tin Oxide-Alignment Layer-Liquid Crystal Structure

• Authors: Z. Mykytyuk , A. Fechan , O. Sushynsky , O. Yasynovska , V. Kotsun
• Languages of publication: EN

Abstracts

EN

This work is connected to investigation of frequency dependences of conductive value and dielectric conductivity of the indium-tin oxide-alignment layer-liquid crystal structure which allows to find new ways in formation of the electrically stabilized structure of liquid crystal materials for the optoelectronic devices.

Keywords

EN

61.30.Gd; 42.82.Gw; 83.80.Xz

Discipline

• 61.30.Gd: Orientational order of liquid crystals; electric and magnetic field effects on order
• 83.80.Xz: Liquid crystals: nematic, cholesteric, smectic, discotic, etc.
• 42.82.Gw: Other integrated-optical elements and systems

• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 248-250

Dates

published

2010-01

Contributors

author

Z. Mykytyuk

• Lviv Polytechnic National University, 79013 Lviv, Ukraine

author

A. Fechan

• Lviv Polytechnic National University, 79013 Lviv, Ukraine

author

O. Sushynsky

• Lviv Polytechnic National University, 79013 Lviv, Ukraine

author

O. Yasynovska

• Lviv Polytechnic National University, 79013 Lviv, Ukraine

author

V. Kotsun

• Lviv Polytechnic National University, 79013 Lviv, Ukraine

References

• 1. Pat. No. u 2008625 Ukraine, G02F 1/13. The method of making of integral microelectronic solid-state device/Hotra Z. [et al.]: assigned to Lviv Polytechnic National University, date of patent: December 29 (2008)
• 2. Ya. Nastishin, O. Dovgyj, O. Vlokh, Ukr. J. Phys. Opt. 3, 98 (2002)
• 3. I. Guralnik, V. Belopuhov, G. Love, A. Naumov, J. Appl. Phys. 87, 4069 (2000)
• 4. H. Naito, Y. Yokoyama, S. Murakami, M. Imai, M. Okuda, A. Sugimura, Mol. Cryst. Liq. Cryst. 262, 249 (1995)

Identifiers

DOI

10.12693/APhysPolA.117.248