Temperature Dependence of Magnetization Reversal of Thin Manganite Film

• Authors: L. Uspenskaya , T. Nurgaliev , S. Miteva
• Languages of publication: EN

Abstracts

EN

The magnetic domain structure, its transformation with temperature, and the magnetization reversal in 20 nm La_{0.7}Sr_{0.3}MnO_{3} film grown on LaAlO_{3} substrate by off-axis magnetron sputtering at 700°C and post-annealed at 600°C were studied in a wide temperature range. The magnetic domains with either in-plane- or out-of-plane-orientation of the vector of spontaneous magnetization were observed in the same film depending on the prehistory. The domains with the in-plane magnetization were found to be more stable. Magnetization reversal of the film was shown to occur via the nucleation and motion of 180-degree head-to-head domain walls, the number and the type of which were found to be dependent on temperature. Moreover, the transition between two magnetization reversal regimes was found at 30 K.

Keywords

EN

75.30.Gw; 75.30.Hx; 75.47.Lx; 75.60.Jk; 75.60.Lr; 75.70.Ak; 75.70.Kw

Discipline

• 75.70.Ak: Magnetic properties of monolayers and thin films
• 75.30.Gw: Magnetic anisotropy
• 75.60.Jk: Magnetization reversal mechanisms
• 75.60.Lr: Magnetic aftereffects
• 75.70.Kw: Domain structure (including magnetic bubbles and vortices)(for domain structure in ferroelectricity and antiferroelectricity, see 77.80.Dj)
• 75.47.Lx: Magnetic oxides
• 75.30.Hx: Magnetic impurity interactions

• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 207-210

Dates

published

2010-01

Contributors

author

L. Uspenskaya

• Institute of Solid State Physics RAS, Chernogolovka, 142432 Moscow dist., Russia

author

T. Nurgaliev

• Institute of Electronics BAS, 1784 Sofia, Bulgaria

author

S. Miteva

• Institute of Electronics BAS, 1784 Sofia, Bulgaria

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Identifiers

DOI

10.12693/APhysPolA.117.207