Luminescence of Cu^{+} and Cu^{2+} Ions in CsBr Crystals

• Authors: Y. Zorenko , T. Voznyak , R. Turchak
• Languages of publication: EN

Abstracts

EN

The luminescence of Cu^{+} and Cu^{2+} ions in CsBr:Cu and CsBr:CuBr_{2} crystals, respectively, is investigated under excitation by synchrotron radiation in the CsBr fundamental absorption range at 10 K and 300 K. The existence of the luminescence bands of different origin: (i) the intrinsic radiative transition of Cu^{+} ions in the bands peaked at 2.61 eV and 2.23 eV, (ii) the recombination luminescence of Cu^{2+} ions in the bands peaked at 2.55 eV and 2.13 eV, (iii) the luminescence of excitons localized around Cu^{+} and Cu^{2+} ions in the band peaked at 3.08 eV and 3.38 eV, respectively, was found in CsBr:Cu and CsBr:CuBr_{2} crystals. The energies of creation of exciton localized around Cu^{+} and Cu^{2+} ions (6.06 eV and 6.09 eV, respectively, at 10 K) and excitons bound with these ions (5.83 eV and 5.99 eV at 300 K) were determined as well.

Keywords

EN

61.72.Hh; 76.30.Kg; 76.30.Lh; 76.70.Dx

Discipline

• 76.30.Lh: Other ions and impurities
• 61.72.Hh: Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
• 76.70.Dx: Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR)
• 76.30.Kg: Rare-earth ions and impurities

• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 199-202

Dates

published

2010-01

Contributors

author

Y. Zorenko

• Laboratory of Optoelectronic Materials, Electronics Department, Ivan Franko National University of Lviv, 107 Gen. Tarnawskogo, 70017 Lviv, Ukraine

author

T. Voznyak

• Laboratory of Optoelectronic Materials, Electronics Department, Ivan Franko National University of Lviv, 107 Gen. Tarnawskogo, 70017 Lviv, Ukraine

author

R. Turchak

• Laboratory of Optoelectronic Materials, Electronics Department, Ivan Franko National University of Lviv, 107 Gen. Tarnawskogo, 70017 Lviv, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.117.199