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Abstracts
The present work is devoted to investigation of optical absorption in pure Gd_{3}Ga_{5}O_{12} (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the ^{235}U ions irradiation with energy 2640 MeV and a fluence 10^{9}-10^{11} cm^{-2}. The induced absorption for 10^{9} cm^{-2} is caused by recharging of point defects, both growth ones and impurities. After irradiation by ^{235}U ions with fluences starting from 3 × 10^{9} cm^{-2} the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
Discipline
- 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
- 61.72.jn: Color centers
- 81.40.Wx: Radiation treatment (particle and electromagnetic)(see also 61.80.-x Physical radiation effects, radiation damage)
- 61.72.J-: Point defects and defect clusters
- 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)
Journal
Year
Volume
Issue
Pages
181-183
Physical description
Dates
published
2010-01
Contributors
author
- Institute of Physics, University of Rzeszow, Rejtana 16A, 35310 Rzeszow, Poland
author
- Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukraine
author
- Scientific Research Company "Carat", 202, Stryjska St., 79031 Lviv, Ukraine
author
- Gesellschaft für Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv117z136kz