Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy ^{235}U Ions

• Authors: P. Potera , S. Ubizskii , D. Sugak , K. Schwartz
• Languages of publication: EN

Abstracts

EN

The present work is devoted to investigation of optical absorption in pure Gd_{3}Ga_{5}O_{12} (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the ^{235}U ions irradiation with energy 2640 MeV and a fluence 10^{9}-10^{11} cm^{-2}. The induced absorption for 10^{9} cm^{-2} is caused by recharging of point defects, both growth ones and impurities. After irradiation by ^{235}U ions with fluences starting from 3 × 10^{9} cm^{-2} the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.

Keywords

EN

61.72.jn; 81.40.Wx; 61.80.Ba; 61.80.Jh; 61.72.J-

Discipline

• 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
• 61.72.jn: Color centers
• 81.40.Wx: Radiation treatment (particle and electromagnetic)(see also 61.80.-x Physical radiation effects, radiation damage)
• 61.72.J-: Point defects and defect clusters
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 181-183

Dates

published

2010-01

Contributors

author

P. Potera

• Institute of Physics, University of Rzeszow, Rejtana 16A, 35310 Rzeszow, Poland

author

S. Ubizskii

• Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukraine

author

D. Sugak

• Scientific Research Company "Carat", 202, Stryjska St., 79031 Lviv, Ukraine

author

K. Schwartz

• Gesellschaft für Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt, Germany

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Identifiers

DOI

10.12693/APhysPolA.117.181