Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy ^{235}U Ions

• Authors: P. Potera , S. Ubizskii , D. Sugak , K. Schwartz
• Languages of publication: EN

Abstracts

EN

The present work is devoted to investigation of optical absorption in pure Gd_{3}Ga_{5}O_{12} (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the ^{235}U ions irradiation with energy 2640 MeV and a fluence 10^{9}-10^{11} cm^{-2}. The induced absorption for 10^{9} cm^{-2} is caused by recharging of point defects, both growth ones and impurities. After irradiation by ^{235}U ions with fluences starting from 3 × 10^{9} cm^{-2} the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.

Keywords

EN

61.72.jn; 81.40.Wx; 61.80.Ba; 61.80.Jh; 61.72.J-

Discipline

• 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
• 61.72.jn: Color centers
• 81.40.Wx: Radiation treatment (particle and electromagnetic)(see also 61.80.-x Physical radiation effects, radiation damage)
• 61.72.J-: Point defects and defect clusters
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 181-183

Dates

published

2010-01

Contributors

author

P. Potera

• Institute of Physics, University of Rzeszow, Rejtana 16A, 35310 Rzeszow, Poland

author

S. Ubizskii

• Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukraine

author

D. Sugak

• Scientific Research Company "Carat", 202, Stryjska St., 79031 Lviv, Ukraine

author

K. Schwartz

• Gesellschaft für Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt, Germany

References

• 1. A. Kaminski, Phys. Status Solidi A 148, 9 (1995)
• 2. M.E. Doroshenko, V.V. Osiko, V.B. Sigachev, M.I. Timoshechkin, Sov. J. Quant. Electron. 21, 266 (1991)
• 3. H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, Y. Fujii, Japanese J. Appl. Phys. 26, L1623 (1987)
• 4. T.S. Rose, M.S. Hopkins, R.A. Fields, IEEE Quant. Electron. 31, 1593 (1995)
• 5. D. Sugak, A. Matkovskii, A. Durygin, A. Suchocki, I. Solski, S. Ubizskii, K. Kopczyński, Z. Mierczyk, P. Potera, J. Lumin. 82, 9 (1999)
• 6. A. Matkovskii, P. Potera, D. Sugak, L. Grigorjeva, D. Millers, V. Pankratov, A. Suchocki, Cryst. Res. Technol. 39, 788 (2004)
• 7. A. Matkovskii, D. Sugak, S. Ubizskii, U. Ulmanis, A. Shakhov, Phys. Status Solidi A 128, 21 (1991)
• 8. M. Pardavi-Horvath, I. Foldvari, I. Fellegvari, L. Gosztonvi, I. Paitz, Phys. Status Solidi A 84, 547 (1984)
• 9. K. Schwartz, C. Trautmann, R. Neumann, Nucl. Instr. Meth. in Phys. Res. B 209, 73 (2003)
• 10. B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S. Ramos, F. Studer, P. Thevenard, M. Toulemonde, Phys. Rev. B 51, 12194 (1995)

Identifiers

DOI

10.12693/APhysPolA.117.181