Kinetics of Charge Transport in Wide-Band Semiconductors at the Detection of X-Ray Radiation

• Authors: V. Degoda , A. Sofienko
• Languages of publication: EN

Abstracts

EN

As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 μm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice. Spatial distribution of the charge carriers makes the form of current pulse on electrodes of the crystal complicated when an external electric field is applied. We present a logical chart of construction of basic kinetic model of X-ray conductivity (XRC) in semiconductors that uses the successive in time calculation of the spatial distribution of free charge carriers and the diffusive-drift model of motion of free carriers in a solid. The basic form of current pulse in an external circle was obtained in the analytical kind for the case of an ideal semiconductor, e.g. that does not contain deep traps and recombination centers, as well as for the case of a crystal with dominant shallow or deep traps of electrons and holes.

Keywords

EN

64.70.kg; 68.55.ag; 07.77.Ka

Discipline

• 68.55.ag: Semiconductors
• 64.70.kg: Semiconductors
• 07.77.Ka: Charged-particle beam sources and detectors(see also 29.40.-n Radiation detectors in nuclear physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 1
• Pages: 155-160

Dates

published

2010-01

Contributors

author

V. Degoda

• Kyiv National Taras Shevchenko University, Department of Physics, Acad. Glushkova ave., 2, building 1, 03680 Kyiv, Ukraine

author

A. Sofienko

• Kyiv National Taras Shevchenko University, Department of Physics, Acad. Glushkova ave., 2, building 1, 03680 Kyiv, Ukraine

References

• 1. J. Eskin, H. Barrett, H. Barber, J. Appl. Phys. 85, 647 (1999)
• 2. N.B. Strokan, Techn. Phys. Russian J. Appl. Phys. 44, 606 (1999)
• 3. G.I. Ayzenshtat, M.D. Vilisova, E.P. Drugova, M.A. Lelekov, D.Yu. Mokeev, I.V. Ponomarev, L.P. Porokhovnichenko, O.P. Tolbanov, V.A. Chubirko, Techn. Phys. Russian J. Appl. Phys. 51, 1008 (2006)
• 4. V. Degoda, A. Sofienko, Bulletin of University of Kyiv: Phys. Math. 9, 52 (2008) (in Ukrainian)
• 5. V. Degoda, A. Sofienko, Bulletin of University of Kyiv: Phys. Math. 3, 232 (2008) (in Ukrainian)
• 6. V. Degoda, A. Sofienko, Bulletin of University of Kyiv: Phys. Math. 1, 233 (2009) (in Ukrainian)
• 7. V. Degoda, A. Sofienko, Ukr. J. Phys. 52, 255 (2007) (in Ukrainian)
• 8. D. Green, The Physics of Particle Detectors, Cambridge University Press, Cambridge 2000
• 9. A. Gurvich, X-Ray Phosphors and X-Ray Screens, Atomizdat, Moscow 1976 (in Russian)
• 10. K. Zeeger, Semicond. Phys., Springer Verlag, Wien 1973
• 11. V. Denis, Yu. Pozhela, Hot Electrons, Mintis, Vilnius 1971 (in Russian)
• 12. A.V. Komashchenko, V.N. Komashchenko, K.V. Kolezhuk, G.I. Sheremetova, V.D. Fursenko, Yu.N. Bobrenko, Semiconductors 36, 286 (2002)
• 13. V. Degoda, Scientific Notes of Kiev National University XI, 255 (2004) (in Ukrainian)
• 14. M.C. Gupta, Handbook of Photonics, CRC Press, Florida 1997
• 15. S. Ramo, Proc. of the I.R.E. 27, 584 (1939)
• 16. W. Shockley, J. Appl. Phys. 9, 635 (1938)

Identifiers

DOI

10.12693/APhysPolA.117.155