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2010 | 117 | 5 | 799-802
Article title

Nanostructured Thin Films β-Al-Mg Obtained Using PLD Technique

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EN
Abstracts
EN
In this work, the pulsed laser deposition (PLD) technique was used to grow AlMg thin films from a β-Mg_{2}Al_{3} target with nominal composition: 39.09 at.% Mg and 60.91 at.% Al. The paper presents the study of β-Mg_{2}Al_{3} thin films deposited using the pulsed laser deposition technique. AlMg thin films were prepared on Si (400) substrates and deposited by means of using a QS-Nd:YAG laser (λ = 266, 355 nm). Samples were prepared with laser fluence (1.1 J/cm^{2} and 1.6 J/cm^{2}) and at two different substrate (Si) temperatures (25°C and 200°C). The target possessed columnar structure and changes in chemical composition took place as a result of the influence of the laser irradiation. Investigations focused on structure and chemical composition showed that the films generally had nanocrystalline structure and that the quantity of Al and Mg varied in the films.
Keywords
Year
Volume
117
Issue
5
Pages
799-802
Physical description
Dates
published
2010-05
References
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  • 2. H.U. Krebs, M. Stoermer, S. Fehler, O. Bremert, M. Hamp, A. Pundt, H. Teichler, W. Blum, T.H. Metzger, Appl. Surf. Sc. 109/110, 563 (1997)
  • 3. R. Eason, Pulsed Laser Deposition of Thin Films, Wiley, Hoboken 2007
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  • 5. C.B. Arnold, M.J. Aziz, Appl. Phys. A 69 S23 (1999)
  • 6. M. Feuerbacher, C. Thomas, K. Urban, Quasicrystals, VCH Wiley, 2003
  • 7. A. Radziszewska, Inżynieria Materiałowa. 3-4 720 (2007)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv117n517kz
Identifiers
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