Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

• Authors: S. Saloum , B. Alkhaled
• Languages of publication: EN

Abstracts

EN

Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N_{2}/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas (NH_{3}, CO_{2} and O_{2}) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported.

Keywords

EN

52.70.Ds; 52.70.Kz; 81.15.Gh; 68.43.-h; 68.55.J-

Discipline

• 68.43.-h: Chemisorption/physisorption: adsorbates on surfaces
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 52.70.Kz: Optical (ultraviolet, visible, infrared) measurements
• 68.55.J-: Morphology of films
• 52.70.Ds: Electric and magnetic measurements

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 3
• Pages: 484-489

Dates

published

2010-03

received

2009-12-03

(unknown)

2010-01-29

Contributors

author

S. Saloum

• Atomic Energy Commission of Syria (AECS), Physics Department, P.O. Box 6091, Damascus, Syria

author

B. Alkhaled

• Atomic Energy Commission of Syria (AECS), Physics Department, P.O. Box 6091, Damascus, Syria

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Identifiers

DOI

10.12693/APhysPolA.117.484