Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

• Authors: R. Knizikevičius
• Languages of publication: EN

Abstracts

EN

The plasma chemical etching of Si and SiO_{2} in SF_{6}+O_{2} plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO_{2} etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO_{2} molecules are equal to ε = (8.75 ± 0.41) × 10^{-3} and ε = (7.18 ± 0.45) × 10^{-5}, respectively. The influence of O_{2} addition to SF_{6} plasma on the etching rate of Si is determined.

Keywords

EN

52.77.Bn; 81.65.Rv

Discipline

• 81.65.Rv: Passivation(see also 82.45.Bb Corrosion and passivation in electrochemistry)
• 52.77.Bn: Etching and cleaning(see also 81.65.Cf Surface cleaning, etching, patterning in surface treatments)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 3
• Pages: 478-483

Dates

published

2010-03

received

2008-07-04

(unknown)

2009-11-23

(unknown)

2009-12-01

Contributors

author

R. Knizikevičius

• Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.117.478