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2010 | 117 | 3 | 478-483
Article title

Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

Content
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Languages of publication
EN
Abstracts
EN
The plasma chemical etching of Si and SiO_{2} in SF_{6}+O_{2} plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO_{2} etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO_{2} molecules are equal to ε = (8.75 ± 0.41) × 10^{-3} and ε = (7.18 ± 0.45) × 10^{-5}, respectively. The influence of O_{2} addition to SF_{6} plasma on the etching rate of Si is determined.
Keywords
EN
Publisher

Year
Volume
117
Issue
3
Pages
478-483
Physical description
Dates
published
2010-03
received
2008-07-04
(unknown)
2009-11-23
(unknown)
2009-12-01
Contributors
  • Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv117n309kz
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