Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

• Authors: A. Misiuk , W. Wierzchowski , K. Wieteska , C. Londos , A. Andrianakis , J. Bak-Misiuk , D. Yang , B. Surma
• Languages of publication: EN

Abstracts

EN

Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.

Keywords

EN

61.05.cp; 61.72.-y; 61.72.Ff; 61.72.uf; 62.50.-p

Discipline

• 61.05.cp: X-ray diffraction
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 61.72.uf: Ge and Si
• 62.50.-p: High-pressure effects in solids and liquids(for high pressure apparatus and techniques, see 07.35.+k; for high-pressure behavior of rocks and minerals, see 91.60.Gf; for pressure treatments, see 81.40.Vw in materials science; for effects of pressure on superconducting transition temperature, see 74.62.Fj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 2
• Pages: 344-347

Dates

published

2010-02

Contributors

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

C. Londos

• University of Athens, Athens 15784, Greece

author

A. Andrianakis

• University of Athens, Athens 15784, Greece

author

J. Bak-Misiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Yang

• State Key Laboratory of Silicon Materials, Hangzhou 310027, PR China

author

B. Surma

• Institute of Electronic Materials Technology, 01-919 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.117.344