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2010 | 117 | 2 | 344-347
Article title

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

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Abstracts
EN
Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
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Contributors
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electronic Materials Technology, 01-919 Warsaw, Poland
author
  • Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland
author
  • University of Athens, Athens 15784, Greece
  • University of Athens, Athens 15784, Greece
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • State Key Laboratory of Silicon Materials, Hangzhou 310027, PR China
author
  • Institute of Electronic Materials Technology, 01-919 Warsaw, Poland
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv117n220kz
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