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2010 | 117 | 2 | 336-340
Article title

The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals

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EN
Abstracts
EN
The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG.
Keywords
EN
Contributors
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland
References
  • 1. A.R. Lang, Acta Crystallogr. 7, 583 (1954)
  • 2. A.R. Lang, Z.-H. Mai, Proc. R. Soc. A 368, 313 (1979)
  • 3. E. Zielińska-Rohozińska, Phys. Status Solidi A 59, 317 (1980)
  • 4. P. Zaumseil, Kristall u. Technikg 13, 963 (1978)
  • 5. J Bąk-Misiuk, J. Gronkowski, J. Härtwig, W. Wierzchowski, Phys. Status Solidi A 99, 345 (1987)
  • 6. W. Wierzchowski, M. Moore, Acta Phys. Pol. A 82, 193 (1992)
  • 7. W. Wierzchowski, K. Wieteska, W. Graeff, Il Nuovo Cimentog 19D, 233 (1997)
  • 8. W. Wierzchowski, K. Wieteska, W. Graeff, J. Phys. D, Appl. Phys. 33, 1230 (2000)
  • 9. J.E. Miltat, D.K. Bowen, J. Appl. Crystallogr. 8, 657 (1975)
  • 10. M. Dudley, X.R. Huang, V.M. Vetter, J. Phys. D, Appl. Phys. 36, A30 (2003)
  • 11. X.R. Huang, M. Dudley, W.M. Vetter, W. Huang, S. Vang, C.H. Carter, Appl. Phys. Lett. 74, 353 (1999)
  • 12. H. Obsato, T. Kato, T. Okuda, Mater. Sci. Semicond. Processg 4, 483 (2001)
  • 13. T. Argunova, V. Kohn, J.-W. Jung, J.-H. Je, Phys. Status Solidi A 206, 1833 (2009)
  • 14. V. Kohn, T. Argunova, J.-H. Je, Appl. Phys. Lett. 91, 171901 (2007)
  • 15. R. Sen, J. Quant. Mech. VIII, 365 (1949)
  • 16. K. Mazur, W. Wierzchowski, J. Cryst. Growthg 148, 345 (1995)
  • 17. Y. Epelboin, A. Soyer, Acta Crystallogr. A 41, 61 (1985)
  • 18. T. Bedyńska, Phys. Status Solidi A 18, 147 (1973)
  • 19. A. Authier, C. Malgrange, M. Tournarie, Acta Crystallogr. A 24, 126 (1968)
  • 20. T. Uragami, J. Phys. Soc. Japang 27, 147 (1969)
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv117n218kz
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