The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals

• Authors: T. Balcer , W. Wierzchowski , K. Wieteska
• Languages of publication: EN

Abstracts

EN

The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG.

Keywords

EN

61.72.Ff; 61.72.up

Discipline

• 61.72.up: Other materials
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 2
• Pages: 336-340

Dates

published

2010-02

Contributors

author

T. Balcer

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

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Identifiers

DOI

10.12693/APhysPolA.117.336