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2010 | 117 | 2 | 293-295

Article title

A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

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EN

Abstracts

EN
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.

Keywords

EN

Contributors

author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Chernivtsi Branch of the Institute for Materials Science Problems, National Academy of Sciences of Ukraine, 5 Vilde Str., 58001 Chernivtsi, Ukraine
author
  • Chernivtsi Branch of the Institute for Materials Science Problems, National Academy of Sciences of Ukraine, 5 Vilde Str., 58001 Chernivtsi, Ukraine
author
  • Institute of Experimental Physics, University of Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany

References

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Document Type

Publication order reference

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YADDA identifier

bwmeta1.element.bwnjournal-article-appv117n208kz
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