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2009 | 116 | S | S-139-S-141
Article title

Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

Content
Title variants
Languages of publication
EN
Abstracts
EN
Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several μm by means of photolithography equipment working with μm-scale design rules. Process details influencing a shape of the Si pattern have been discussed. SEM examinations have been presented.
Keywords
Year
Volume
116
Issue
S
Pages
S-139-S-141
Physical description
Dates
published
2009-12
References
  • 1. P.J. Tsang, S. Ogura, W.W. Walker, J.F. Shepard, D.L. Critchlow, IEEE Trans. Electron Dev. ED-29, 590 (1982)
  • 2. Yang-Kyu Choi, Tsu-Jae King, Chenming Hu, IEEE Electron Dev. Lett. 23, 25 (2002)
  • 3. M. Zaborowski, P. Grabiec, I.W. Rangelow, Microelectron. Eng. 73-74, 588 (2004)
  • 4. M. Zaborowski, D. Szmigiel, T. Gotszalk, K. Ivanova, Y. Sarov, T. Ivanov, B.E. Volland, I.W. Rangelow, P. Grabiec, Microelectron. Eng. 83, 1555 (2006)
  • 5. M. Zaborowski, P. Grabiec, Microelectron. Eng. 85, 1257 (2008)
  • 6. D. Tomaszewski, A. Malinowski, M. Zaborowski, P. Sałek, L. Łukasiak, A. Jakubowski, Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems MIXDES 2009, DMCS Techn. Univ. of Łódź, Łódź 2009, p. 61
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns39kz
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