Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si_{3}N_{4} mask - PaDEOx

• Authors: M. Zaborowski , P. Grabiec , R. Dobrowolski , A. Panas , K. Skwara , D. Szmigiel , M. Wzorek
• Languages of publication: EN

Abstracts

EN

Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several μm by means of photolithography equipment working with μm-scale design rules. Process details influencing a shape of the Si pattern have been discussed. SEM examinations have been presented.

Keywords

EN

68.65.-k   74.78.-w   81.16.Nd   81.16.Rf   81.65.Cf  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-139-S-141

Dates

published

2009-12

References

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• 5. M. Zaborowski, P. Grabiec, Microelectron. Eng. 85, 1257 (2008)
• 6. D. Tomaszewski, A. Malinowski, M. Zaborowski, P. Sałek, L. Łukasiak, A. Jakubowski, Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems MIXDES 2009, DMCS Techn. Univ. of Łódź, Łódź 2009, p. 61

Identifiers

DOI

10.12693/APhysPolA.116.S-139