Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

• Authors: J. Prażmowska , R. Korbutowicz , M. Wośko , R. Paszkiewicz , J. Kovač , R. Srnanek , M. Tłaczała
• Languages of publication: EN

Abstracts

EN

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

Keywords

EN

81.10.Bk; 81.15.Gh; 81.15.Kk

Discipline

• 81.10.Bk: Growth from vapor
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 81.15.Kk: Vapor phase epitaxy; growth from vapor phase

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-123-S-125

Dates

published

2009-12

Contributors

author

J. Prażmowska

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

R. Korbutowicz

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

M. Wośko

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

R. Paszkiewicz

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

J. Kovač

• Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia
• International Laser Centre, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

R. Srnanek

• International Laser Centre, Ilkovicova 3, 812 19 Bratislava, Slovakia

author

M. Tłaczała

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.116.S-123