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2009 | 116 | S | S-123-S-125
Article title

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

Content
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Languages of publication
EN
Abstracts
EN
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
Keywords
EN
Contributors
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
author
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
author
  • Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia
  • International Laser Centre, Ilkovicova 3, 812 19 Bratislava, Slovakia
author
  • International Laser Centre, Ilkovicova 3, 812 19 Bratislava, Slovakia
author
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns34kz
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