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2009 | 116 | S | S-123-S-125
Article title

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al_{2}O_{3}. Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
Keywords
EN
Year
Volume
116
Issue
S
Pages
S-123-S-125
Physical description
Dates
published
2009-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns34kz
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