Porous Silicon Formation by Metal-Assisted Chemical Etching

• Authors: M. Lipinski , J. Cichoszewski , R. Socha , T. Piotrowski
• Languages of publication: EN

Abstracts

EN

The method of metal-assisted chemical etching produces a porous silicon layer. Palladium particles are deposited on both: multi-crystalline and Czochralski grown mono-crystalline Si wafers by immersing them in PdCl_{2} solution for 1 to 3 min. X-ray photoelectron spectroscopy analysis of Pd clusters shows a decrease in Pd metal fraction by prolonged immersion time t from F_{Pd} = 71.2% for t = 1 min to F_{Pd} = 61.4% for t = 3 min due to Pd oxidation process. Porous silicon forms by metal-assisted chemical etching in a HF:H_{2}O_{2} solution for 1 to 3 min. Photoluminescence of metal-assisted chemical etched samples exhibits the peak with a maximum of t at λ=650 nm independent of the etching time. Simultaneously, the intensity of the photoluminescence spectra strongly decreases for extended etching time t = 3 min. This behavior is attributed to increasing layer macroporosity, which strongly reduces amount of light emitting nanocrystallites.

Keywords

EN

81.16.Rf   81.05.Rm   78.55.Mb   61.43.Gt   78.67.Bf  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-117-S-119

Dates

published

2009-12

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Identifiers

DOI

10.12693/APhysPolA.116.S-117