TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

• Authors: J. Ratajczak , A. Łaszcz , A. Czerwinski , J. Kątcki , X. Tang , N. Reckinger , D. Yarekha , G. Larrieu , E. Dubois
• Languages of publication: EN

Abstracts

EN

The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

Keywords

EN

85.40.-e; 68.37.Lp

Discipline

• 68.37.Lp: Transmission electron microscopy (TEM)
• 85.40.-e: Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology(see also 85.45.-w Vacuum microelectronics; 84.40.Lj Microwave integrated electronics; 42.82.-m Integrated optics; 85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-89-S-91

Dates

published

2009-12

Contributors

author

J. Ratajczak

• Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Łaszcz

• Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Czerwinski

• Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kątcki

• Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland

author

X. Tang

• Microelectronics Laboratory, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium

author

N. Reckinger

• Microelectronics Laboratory, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium

author

D. Yarekha

• Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France

author

G. Larrieu

• Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France

author

E. Dubois

• Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France

References

• 1. J.P. Colinge, FinFETs and Other Multi-Gate Transistors, Springer Science + Business Media, LLC, New York 2008
• 2. X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D.A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, J.P. Raskin, Appl. Phys. Lett. 95, 023106 (2009)
• 3. JCPDS International Center for Powder Diffraction Data: PtSi (07-0251)
• 4. A. Łaszcz, J. Kątcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, E. Dubois, Nucl. Instrum. Methods Phys. Res. B 253, 274 (2006)

Identifiers

DOI

10.12693/APhysPolA.116.S-89