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2009 | 116 | S | S-89-S-91
Article title

TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

Content
Title variants
Languages of publication
EN
Abstracts
EN
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
Keywords
EN
Year
Volume
116
Issue
S
Pages
S-89-S-91
Physical description
Dates
published
2009-12
References
  • 1. J.P. Colinge, FinFETs and Other Multi-Gate Transistors, Springer Science + Business Media, LLC, New York 2008
  • 2. X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D.A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, J.P. Raskin, Appl. Phys. Lett. 95, 023106 (2009)
  • 3. JCPDS International Center for Powder Diffraction Data: PtSi (07-0251)
  • 4. A. Łaszcz, J. Kątcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, E. Dubois, Nucl. Instrum. Methods Phys. Res. B 253, 274 (2006)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns23kz
Identifiers
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