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2009 | 116 | S | S-89-S-91
Article title

TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

Content
Title variants
Languages of publication
EN
Abstracts
EN
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
Keywords
EN
Contributors
author
  • Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Microelectronics Laboratory, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium
author
  • Microelectronics Laboratory, Université catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium
author
  • Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France
author
  • Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France
author
  • Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France
References
  • 1. J.P. Colinge, FinFETs and Other Multi-Gate Transistors, Springer Science + Business Media, LLC, New York 2008
  • 2. X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D.A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, J.P. Raskin, Appl. Phys. Lett. 95, 023106 (2009)
  • 3. JCPDS International Center for Powder Diffraction Data: PtSi (07-0251)
  • 4. A. Łaszcz, J. Kątcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, E. Dubois, Nucl. Instrum. Methods Phys. Res. B 253, 274 (2006)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns23kz
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