Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current

• Authors: M. Pluska , A. Czerwinski , J. Ratajczak , A. Szerling , J. Kątcki
• Languages of publication: EN

Abstracts

EN

The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.

Keywords

EN

78.60.Hk; 85.30.De; 61.72.-y

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 78.60.Hk: Cathodoluminescence, ionoluminescence

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-86-S-88

Dates

published

2009-12

Contributors

author

M. Pluska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Czerwinski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kątcki

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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• 7. O. Sjölund, H.T. Lin, D.H. Rich, M. Ghisoni, A. Larsson, S. Wang, J. Thordsson, T.G. Andersson, J. Appl. Phys. 82, 1438 (1997)

Identifiers

DOI

10.12693/APhysPolA.116.S-86