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2009 | 116 | S | S-86-S-88
Article title

Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current

Content
Title variants
Languages of publication
EN
Abstracts
EN
The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
Keywords
EN
Year
Volume
116
Issue
S
Pages
S-86-S-88
Physical description
Dates
published
2009-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns22kz
Identifiers
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