Journal
Article title
Title variants
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Abstracts
The surface of 6H-SiC(0001) samples was subjected to etching under H_{2}/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Discipline
- 79.60.Dp: Adsorbed layers and thin films
- 72.80.Jc: Other crystalline inorganic semiconductors
- 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
- 68.37.Ps: Atomic force microscopy (AFM)
- 81.65.Cf: Surface cleaning, etching, patterning(see also 52.77.Bn Etching and cleaning in physics of plasmas)
Journal
Year
Volume
Issue
Pages
S-82-S-85
Physical description
Dates
published
2009-12
Contributors
author
- Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland
author
- Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland
References
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- 8. W.P. Press, B.P. Flannery, S.A. Teukolsky, W.T. Vetterling, Numerical Recipe in C, University Press, Cambridge 1986
- 9. B. Vincent Crist, Handbooks of Monochromatic XPS Spectra, XPS International Inc., USA 1999
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns21kz