Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

• Authors: M. Grodzicki , R. Wasielewski , S. Surma , A. Ciszewski
• Languages of publication: EN

Abstracts

EN

The surface of 6H-SiC(0001) samples was subjected to etching under H_{2}/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.

Keywords

EN

81.65.Cf; 81.15.Gh; 72.80.Jc; 79.60.Dp; 68.37.Ps

Discipline

• 79.60.Dp: Adsorbed layers and thin films
• 72.80.Jc: Other crystalline inorganic semiconductors
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 68.37.Ps: Atomic force microscopy (AFM)
• 81.65.Cf: Surface cleaning, etching, patterning(see also 52.77.Bn Etching and cleaning in physics of plasmas)

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-82-S-85

Dates

published

2009-12

Contributors

author

M. Grodzicki

• Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland

author

R. Wasielewski

• Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland

author

S. Surma

• Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland

author

A. Ciszewski

• Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.116.S-82