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2009 | 116 | S | S-82-S-85
Article title

Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

Content
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Languages of publication
EN
Abstracts
EN
The surface of 6H-SiC(0001) samples was subjected to etching under H_{2}/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Keywords
Year
Volume
116
Issue
S
Pages
S-82-S-85
Physical description
Dates
published
2009-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns21kz
Identifiers
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