Microscopic Investigation of SiC Epitaxial Layers οn On-Axis 4H-SiC Substrates Using Kelvin Probe Force Microscopy

• Authors: K. Kościewicz , R. Bożek , W. Strupiński , A. Olszyna
• Languages of publication: EN

Abstracts

EN

We report on Kelvin probe force microscopy and electron backscatter diffraction measurements of 3C-SiC epitaxial layers grown on exactly oriented Si-face 4H-SiC (0001) substrates in a horizontal hot-wall chemical vapor deposition reactor, in the temperature range from 1150°C to 1620°C, under H_{2} or H_{2} +SiH_{4} atmosphere. The investigated layers were doped with nitrogen (for n-type) and aluminium (for p-type). The electron backscatter diffraction analysis revealed structure of polytype 3C blocks with a relative rotation of 60 and/or 120°. The Kelvin probe force microscopy measurements revealed cubic substructure as a equilateral triangle objects contrast which is characteristic of 3C silicon carbide polytype. The surface potential contrast was found to be dependent on the type and concentration of doping, which could be explained in terms of the impurities accumulation at block boundaries.

Keywords

EN

68.35.bg; 81.15.-z; 34.20.-b; 61.05.J-

Discipline

• 68.35.bg: Semiconductors
• 61.05.J-: Electron diffraction and scattering(for electron diffractometers, see 07.78.+s)
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
• 34.20.-b: Interatomic and intermolecular potentials and forces, potential energy surfaces for collisions(see also 82.20.Kh Potential energy surfaces for reactions; for potential energy surfaces in electronic structure calculations, see 31.50.-x)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-69-S-71

Dates

published

2009-12

Contributors

author

K. Kościewicz

• Materials Science and Engineering, Warsaw University of Technology, Wołoska 141, 02-507 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Olszyna

• Materials Science and Engineering, Warsaw University of Technology, Wołoska 141, 02-507 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.116.S-69