Electronic States in Type-II Superlattices

• Authors: E. Machowska-Podsiadlo , M. Bugajski
• Languages of publication: EN

Abstracts

EN

In this paper the electronic states in type-II superlattices are demonstrated. Band dispersions of InAs/GaSb periodic structure were calculated with the respect of the light and the heavy holes states mixing at InAs/GaSb interfaces. The effect of narrow energy band gap of InAs was taken into account and the wavelengths corresponding to optical transitions in the superlattice were presented.

Keywords

EN

71.15.Dx; 73.21.Cd; 78.67.Pt; 85.35.Be

Discipline

• 78.67.Pt: Multilayers; superlattices; photonic structures; metamaterials(see also 81.05.Xj, Metamaterials for chiral, bianisotropic and other complex media)
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 73.21.Cd: Superlattices
• 71.15.Dx: Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-65-S-68

Dates

published

2009-12

Contributors

author

E. Machowska-Podsiadlo

• University of Technology, W. Pola 2, 35-959 Rzeszów, Poland

author

M. Bugajski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. F. Szmulowicz, Eur. J. Phys. 25, 569 (2004)
• 2. E.R. Heller, K. Fisher, F. Szmulowicz, F.L. Madarasz, J. Appl. Phys. 77, 5739 (1995)
• 3. R.H.J. De Meester, F.M. Peeters, M. Lakrimi, R.J. Nicholas, A.J.L. Poulter, N.J. Mason, P.J. Walker, Physica E 7, 93 (2000)

Identifiers

DOI

10.12693/APhysPolA.116.S-65