Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD

• Authors: M. Wesołowski , W. Strupiński
• Languages of publication: EN

Abstracts

EN

Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.

Keywords

EN

81.15.Gh; 81.05.Ea; 68.55.A-; 68.55.ag; 68.55.J-; 68.55.Nq

Discipline

• 68.55.A-: Nucleation and growth
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 68.55.Nq: Composition and phase identification
• 68.55.ag: Semiconductors
• 68.55.J-: Morphology of films
• 81.05.Ea: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-62-S-64

Dates

published

2009-12

Contributors

author

M. Wesołowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

References

• 1. P.S. Dutta, H.L. Bhat, Vikram Kumar, J. Appl. Phys. 81, 5821 (1997)
• 2. F. Dimroth, C. Agert, A.W. Bett, J. Cryst. Growth 248, 265 (2003)
• 3. A. Aardvark, N.J. Mason, P.J. Walker, Prog. Crystal Growth Charact. 35, 207 (1997)
• 4. R.M. Biefeld, Mater. Sci. Eng. R 36, 105 (2002)
• 5. C.A. Wang, J. Cryst. Growth 272, 664 (2004)

Identifiers

DOI

10.12693/APhysPolA.116.S-62