Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Discipline
- 68.55.A-: Nucleation and growth
- 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
- 68.55.Nq: Composition and phase identification
- 68.55.ag: Semiconductors
- 68.55.J-: Morphology of films
- 81.05.Ea: III-V semiconductors
Journal
Year
Volume
Issue
Pages
S-62-S-64
Physical description
Dates
published
2009-12
Contributors
author
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
References
- 1. P.S. Dutta, H.L. Bhat, Vikram Kumar, J. Appl. Phys. 81, 5821 (1997)
- 2. F. Dimroth, C. Agert, A.W. Bett, J. Cryst. Growth 248, 265 (2003)
- 3. A. Aardvark, N.J. Mason, P.J. Walker, Prog. Crystal Growth Charact. 35, 207 (1997)
- 4. R.M. Biefeld, Mater. Sci. Eng. R 36, 105 (2002)
- 5. C.A. Wang, J. Cryst. Growth 272, 664 (2004)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns15kz