The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers

• Authors: E. Pruszyńska-Karbownik , P. Karbownik , A. Szerling , K. Kosiel , M. Bugajski
• Languages of publication: EN

Abstracts

EN

Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.

Keywords

EN

42.55.Px; 85.60.-q; 85.35.Be; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 42.55.Px: Semiconductor lasers; laser diodes
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-60-S-61

Dates

published

2009-12

Contributors

author

E. Pruszyńska-Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kosiel

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.116.S-60