LT-InGaAs Layer Grown for Near Surface SESAM Application

• Authors: A. Jasik , J. Muszalski , M. Kosmala , K. Pierściński
• Languages of publication: EN

Abstracts

EN

We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.

Keywords

EN

61.72.jj; 68.55.ag; 68.65.Ac; 81.15.Hi; 81.65.Rv

Discipline

• 81.65.Rv: Passivation(see also 82.45.Bb Corrosion and passivation in electrochemistry)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 61.72.jj: Interstitials
• 68.55.ag: Semiconductors
• 68.65.Ac: Multilayers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-56-S-59

Dates

published

2009-12

Contributors

author

A. Jasik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Muszalski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Kosmala

• Warsaw University of Technology, pl. Politechniki 1, , 00-661 Warsaw, Poland

author

K. Pierściński

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.116.S-56