PL EN


Preferences help
enabled [disable] Abstract
Number of results
2009 | 116 | S | S-56-S-59
Article title

LT-InGaAs Layer Grown for Near Surface SESAM Application

Content
Title variants
Languages of publication
EN
Abstracts
EN
We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
Keywords
Contributors
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Warsaw University of Technology, pl. Politechniki 1, , 00-661 Warsaw, Poland
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • 1. D.C. Look, Thin Solid Films 231, 61 (1993)
  • 2. A. Krotkus, S. Marcinkevičius, C. Jagadish, M. Kaminska, J. Lumin. 66-67, 455 (1996)
  • 3. A.J. Lochtefeld, R.M. Melloch, J.C.P. Chang, E.S. Harmon, Appl. Phys. Lett. 69, 1465 (1996)
  • 4. M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, R.C. Lutz, P. Specht, E.R. Weber, Appl. Phys. Lett. 74, 3134 (1999)
  • 5. X. Liu, A. Prasad, W.M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber, E.R. Weber, Appl. Phys. Lett. 65, 3002 (1994)
  • 6. V. Liverini, S. Schön, R. Grange, M. Haiml, S.C. Zeller, U. Keller, Appl. Phys. Lett. 84, 4002 (2004)
  • 7. A.C. Warren, J.M. Woodwall, J.L. Freeouf, D. Grischkowsky, D.T. McInturff, M.R. Melloch, N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990)
  • 8. A. Krotkus, J.-L. Coutaz, Semicond. Sci. Technol. 20, 142 (2005)
  • 9. G. Paunescu, J. Hein, R. Sauerbrey, Appl. Phys. B 79, 555 (2004)
  • 10. P. Klopp, V. Petrov, U. Griebner, G. Erbert, Opt. Exp. 10, 108 (2002)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns13kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.