Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology

• Authors: A. Szerling , P. Karbownik , K. Kosiel , J. Kubacka-Traczyk , E. Pruszyńska-Karbownik , M. Płuska , M. Bugajski
• Languages of publication: EN

Abstracts

EN

The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/Al_{0.45}Ga_{0.55}As laser without anti-reflection/high-reflection coatings.

Keywords

EN

42.55.Px; 85.60.-q; 85.35.Be; 72.80.Ey; 73.61.Ey; 78.66.Fd

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 78.66.Fd: III-V semiconductors
• 42.55.Px: Semiconductor lasers; laser diodes
• 73.61.Ey: III-V semiconductors
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: S
• Pages: S-45-S-47

Dates

published

2009-12

Contributors

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

P. Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

K. Kosiel

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

J. Kubacka-Traczyk

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

E. Pruszyńska-Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

M. Płuska

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, al. Lotników 32/46, 02-668, Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.116.S-45