Journal
Article title
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Abstracts
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator HfO_{2}. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Discipline
- 81.05.Dz: II-VI semiconductors
- 85.35.-p: Nanoelectronic devices
- 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
- 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
- 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
Journal
Year
Volume
Issue
Pages
S-19-S-21
Physical description
Dates
published
2009-12
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
- Dept. of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszyński University, Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
References
- 1. G.E. Moore, Electronics 38, 4 (1965)
- 2. http://www.intel.com/technology/silicon/high-k.htm
- 3. T. Suntola, J. Antson, U.S. Patent 4 058, 430 (1977)
- 4. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, V. Osinniy, Appl. Phys. Lett. 92, 023502 (2007)
- 5. M. Godlewski, E. Guziewicz, T. Krajewski, P. Kruszewski, Ł. Wachnicki, K. Kopalko, A. Wójcik, V. Osinniy, Microelectron. Eng. 85, 2434 (2008)
- 6. G. Łuka, T. Krajewski, A. Szczerbakow, E. Łusakowska, K. Kopalko, E. Guziewicz, Ł. Wachnicki, A. Szczepanik, M. Godlewski, J.D. Fidelus, Acta Phys. Pol. A 114, 1229 (2008)
- 7. E. Guziewicz, I.A. Kowalik, M. Godlewski, K. Kopalko, V. Osinniy, A. Wójcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, J. Appl. Phys. 103, 033515 (2008)
- 8. T. Krajewski, E. Guziewicz, M. Godlewski, Ł. Wachnicki, I.A. Kowalik, K. Kopalko, A. Wójcik, V. Osinniy, M. Guziewicz, Microelectron. J 40, 293 (2009)
- 9. A. Szczepanik, Ł. Wachnicki, M. Godlewski, E. Guziewicz, K. Kopalko, E. Janik, E. Łusakowska, A. Czerwiński, M. Płuska, S.A. Yatsunenko, J. Phys., Conf. Ser. 146, 012017 (2009)
- 10. E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, F.C. Krebs, E. Guziewicz, M. Godlewski, G. Łuka, Appl. Phys. Lett. 94, 143501 (2009)
- 11. M. Lira-Cantu, F.C. Krebs, Solar Energy Mater. Solar Cells 90, 2076 (2006)
- 12. 2007 Survey of Energy Resources World Energy Council 2007 (http://www.worldenergy.org/publications/survey_of_energy_resources_2007 )
- 13. M. Godlewski, E. Guziewicz, G. Łuka, T. Krajewski, M. Łukasiewicz, Ł. Wachnicki, A. Wachnicka, K. Kopalko, A. Sarem, B. Dalati, Thin Solid Films 518, 1145 (2009)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116ns03kz