Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

• Authors: A. Janavičius , R. Purlys , A. Bulkšas , S. Balakauskas , A. Mekys , V. Šablinskas
• Languages of publication: EN

Abstracts

EN

In this paper we applied the soft-X-ray radiation for generation of point defects, vacancies, and chemical reactions in quartz (SiO_{2}), taking into account our earlier made similar experiments with crystal silicon and importance of quartz for applications in many fields. In this case only radiative Auger's effects with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections of X-rays and calculated mean square deviations of atoms in crystal lattice for defining the dynamics of irradiated point defects. We accomplished infrared measurements for establishing of generated chemical reactions, and conductivity measurements were also done.

Keywords

EN

81.40.-z; 78.30.-j; 91.60.Mk

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 91.60.Mk: Optical properties

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 6
• Pages: 1076-1080

Dates

published

2009-12

received

2008-09-18

(unknown)

2009-10-02

Contributors

author

A. Janavičius

• Faculty of Nature, Šiauliai University, P. Višinskio 19, 76351 Šiauliai, Lithuania

author

R. Purlys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

A. Bulkšas

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

A. Mekys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

V. Šablinskas

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

References

• 1. A.J. Janavičius, J. Banys, R. Purlys, S. Balakauskas, Lith. J. Phys. 42, 337 (2002)
• 2. V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko, Semicond. Phys., Quant. Electron. Optoelectron. 2, 157 (1999)
• 3. V.S. Vavilov, A.E. Kiv, O.R. Nijazova, Mechanism of Producing and Migration of Defects in Semiconductors, Science, Moscow 1981, p. 368 (in Russian)
• 4. R. Purlys, A.J. Janavičius, A. Mekys, S. Balakauskas, J. Storasta, Lith. J. Phys. 41, 376 (2001)
• 5. A.J. Janavičius, Ž. Norgėla, R. Purlys, Acta Phys. Pol. A 104, 459 (2003)
• 6. A.J. Janavičius, Ž. Norgėla, R. Purlys, Eur. J. Appl. Phys. 29, 127 (2005)
• 7. A.J. Janavičius, J. Storasta, R. Purlys, A. Mekys, S. Balakauskas, Ž. Norgėla, Acta Phys. Pol. A 112, 55 (2007)
• 8. J. Bourgoin, M. Lannoo, Point Defects in Semiconductors II, Experimental Aspects, Springer-Verlag, Berlin 1983, p. 305
• 9. G.D. Watkins, Mater. Sci. Semicond. Proc. 3, 227 (2000)
• 10. S. Takagi, J. Phys. Soc. Jap. 26, 1239 (1969)
• 11. S.J. Turneaure, Y.M. Gupta, Appl. Phys. Lett. 90, 051905 (2007)
• 12. G.F. Savakuchi, E. Okuno, Nuclear Instrum. Methods Phys. Res. B 218, 217 (2004)
• 13. H.G. Lipson, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 37, 524 (1990)
• 14. E.H. Martins Nunes, F. Soares Lameiras, Mater. Res. 8, No. 3, Săo Carlos July/Sept. (2005)
• 15. H. Bahadur, J. Appl. Phys. 66, 4973 (1989)
• 16. L. Skuja, B. Guttler, D. Schiel, A.R. Silin, Phys. Rev. B 58, 14296 (1998)
• 17. B.K. Jones, J. Santana, M. McPherson, Solid State Commun. 105, 547 (1998)
• 18. H. Jain, A.S. Nowick, J. Appl. Phys. 53, 485 (1982)
• 19. J. Toulouse, S. Ling, A.S. Nowick, Phys. Rev. B 37, 7070 (1988)
• 20. G.A. Yurgenson, V.D. Perevertaev, N.I. Dubovikov, Zh. Prikl. Spektrosk. 25, 1045 (1975) (in Russian)

Identifiers

DOI

10.12693/APhysPolA.116.1076