PL EN


Preferences help
enabled [disable] Abstract
Number of results
2009 | 116 | 5 | 956-958
Article title

On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and Cd_{0.99}Mn_{0.01}Te

Content
Title variants
Languages of publication
EN
Abstracts
EN
The dielectric response of gallium doped Cd_{0.99}Mn_{0.01}Te and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for Cd_{0.99}Mn_{0.01}Te:Ga samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
Keywords
EN
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
References
  • 1. A. Jurlewicz, K. Weron, J. Non-Cryst. Solids 305, 112 (2002)
  • 2. J. Trzmiel, E. Płaczek-Popko, K. Weron, J. Szatkowski, E. Wojtyna, Acta Phys. Pol. A 114, 1417 (2008)
  • 3. A.K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectric Press, London 1983
  • 4. J. Szatkowski, E. Płaczek-Popko, K. Sierański, J. Fijałkowski, A. Hajdusianek, B. Bieg, Mater. Sci. Forum 258-263, 1413 (1997)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n563kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.