Band Structure and Optical Properties οf the Layered Hg_{3}TeCl_{4} Crystal

• Authors: M. Sznajder , D. Bercha , P. Potera , A. Khachapuridze , V. Panko , S. Bercha
• Languages of publication: EN

Abstracts

EN

First experimental investigations on absorption and photoluminescence of the novel Hg_{3}TeCl_{4} monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the Hg_{3}TeCl_{4} crystal confirmed that Hg_{3}TeCl_{4} is a wide-band-gap photoconductor (E_{g}= 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.

Keywords

EN

78.20.-e; 78.40.-q; 78.55.-m; 71.20.-b

Discipline

• 71.20.-b: Electron density of states and band structure of crystalline solids
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 78.40.-q: Absorption and reflection spectra: visible and ultraviolet(for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 950-951

Dates

published

2009-11

Contributors

author

M. Sznajder

• Institute of Physics, University of Rzeszów, Rejtana 16a, 35-310 Rzeszów, Poland

author

D. Bercha

• Institute of Physics, University of Rzeszów, Rejtana 16a, 35-310 Rzeszów, Poland
• Institute of Physics and Chemistry of Solid States, Uzhgorod National University, Uzhgorod, Ukraine

author

P. Potera

• Institute of Physics, University of Rzeszów, Rejtana 16a, 35-310 Rzeszów, Poland

author

A. Khachapuridze

• Institute of High Pressure Physics "Unipress", Polish Academy of Sciences, Warsaw, Poland

author

V. Panko

• Institute of Physics and Chemistry of Solid States, Uzhgorod National University, Uzhgorod, Ukraine

author

S. Bercha

• Taras Shevchenko Kiev University, Physics Department, Kiev, Ukraine

References

• 1. V. Voroshilov, V.A. Khudolyi, V.V. Panko, Zh. Neorg. Khim. 41, 287 (1996)
• 2. M. Sznajder, D.M. Bercha, L.Yu. Kharkhalis, Phys. Status Solidi B 245, 1571 (2008)
• 3. M. Sznajder, Phys. Status Solidi B 246, 147 (2009)
• 4. M.P. Lisitsa, F.V. Motsnyi, Kvantova Elektronika 17, 26 (1979)

Identifiers

DOI

10.12693/APhysPolA.116.950