Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

• Authors: K. Grodecki , A. Wysmołek , R. Stępniewski , J. Baranowski , W. Hofman , E. Tymicki , K. Grasza
• Languages of publication: EN

Abstracts

EN

Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11-20] and [10-10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98-5.5 cm^{-1} GPa^{-1} for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6-3.6 cm^{-1} GPa^{-1} were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.

Keywords

EN

62.50.-p; 42.65.Dr; 63.20.-e; 78.30.-j

Discipline

• 42.65.Dr: Stimulated Raman scattering; CARS(for Raman lasers, see 42.55.Ye)
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)
• 62.50.-p: High-pressure effects in solids and liquids(for high pressure apparatus and techniques, see 07.35.+k; for high-pressure behavior of rocks and minerals, see 91.60.Gf; for pressure treatments, see 81.40.Vw in materials science; for effects of pressure on superconducting transition temperature, see 74.62.Fj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 947-949

Dates

published

2009-11

Contributors

author

K. Grodecki

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Hofman

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

E. Tymicki

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Grasza

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. A. Debernardi, C. Ulrich, K. Syassen, M. Cardona, Phys. Rev. B 59, 10 (1999)
• 2. C. Ulrich, A. Debernardi, E. Anastassakis, K. Syassen, M. Cardona, Phys. Status Solidi B 211, 293 (1999)
• 3. A. Wysmołek, K. Wardak, R. Stępniewski, J.M. Baranowski, M. Potemski, E. Tymicki, K. Grasza, Acta Phys. Pol. A 110, 437 (2006)
• 4. S. Nakashima, H. Harima, T. Tomita, T. Suemoto, Phys. Rev. B 62, 24 (2000)
• 5. Z.C. Feng, W.J. Choyke, J.A. Poweil, J. Appl. Phys. 64, 12 (1988)
• 6. J. Borysiuk, R. Bożek, W. Strupiński, A. Wysmołek, K. Grodecki, R. Stępniewski, J.M. Baranowski, J. Appl. Phys. 105, 023503 (2009)
• 7. Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Am. Chem. Soc. Nano 2, 2301 (2008)
• 8. N. Ferralis, R. Maboudian, C. Carraro, Phys. Rev. Lett. 101, 156801 (2008)
• 9. J.A. Robinson, C.P. Puls, N.E. Staley, J.P. Stitt, M.A. Fanton, K.V. Emtsev, T. Seyller, Y. Liu, Nano Lett. 9, 3 (2009)

Identifiers

DOI

10.12693/APhysPolA.116.947