Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes

• Authors: P. Dyba , E. Płaczek-Popko , E. Zielony , Z. Gumienny , J. Szatkowski
• Languages of publication: EN

Abstracts

EN

Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy E_2 = 0.33 eV and capture cross-section σ_2 = 3 × 10^{-15} cm^2 has been assigned to the gallium related DX center present in the CdTe material.

Keywords

EN

81.05.Dz; 85.30.De; 84.37.+q

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 84.37.+q: Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 944-946

Dates

published

2009-11

Contributors

author

P. Dyba

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland

author

E. Płaczek-Popko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland

author

E. Zielony

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland

author

Z. Gumienny

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland

author

J. Szatkowski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańkiego 27, 50-370 Wrocław, Poland

References

• 1. E. Płaczek-Popko, J. Szatkowski, P. Becla, J. Appl. Phys. 95, 1171 (2004)
• 2. C.H. Park, D.J. Chadi, Phys. Rev. B 52, 11884 (1995)
• 3. E. Płaczek-Popko, Z. Gumienny, J. Trzmiel, J. Szatkowski, Opt. Appl. 38, 559 (2008)
• 4. J. Trzmiel, E. Płaczek-Popko, K. Weron, J. Szatkowski, E. Wojtyna, Acta Phys. Pol. A 114, 1417 (2008)
• 5. E.H. Rhoderic, R.H. Wiliams, Metal Semiconductor Contact, 2nd ed., Clarendon, Oxford 1988
• 6. S.M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, 3rd ed., Wiley, Hoboken, New Jersey 2007
• 7. P. Blood, J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, 1992

Identifiers

DOI

10.12693/APhysPolA.116.944