Near IR Refractive Index for GaInN Heavily Doped with Silicon

• Authors: G. Cywiński , R. Kudrawiec , W. Rzodkiewicz , M. Kryśko , E. Litwin-Staszewska , J. Misiewicz , C. Skierbiszewski
• Languages of publication: EN

Abstracts

EN

The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of Ga_{0.998}In_{0.002}N:Si has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× 10^{20} cm^{-3} and 67 cm^{2}/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.

Keywords

EN

61.72.uj; 78.66.Fd; 81.15.Hi; 68.55.-a; 78.20.-e

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 78.66.Fd: III-V semiconductors
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 936-938

Dates

published

2009-11

Contributors

author

G. Cywiński

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

R. Kudrawiec

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Kryśko

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

E. Litwin-Staszewska

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

C. Skierbiszewski

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.116.936