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2009 | 116 | 5 | 933-935
Article title

Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots

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EN
Abstracts
EN
Time evolution of the microphotoluminescence from low-density GaN/Al_{x}Ga_{1-x}N quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
Keywords
EN
Publisher

Year
Volume
116
Issue
5
Pages
933-935
Physical description
Dates
published
2009-11
Contributors
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n554kz
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