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2009 | 116 | 5 | 930-932
Article title

Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence

Content
Title variants
Languages of publication
EN
Abstracts
EN
GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
Keywords
EN
Year
Volume
116
Issue
5
Pages
930-932
Physical description
Dates
published
2009-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n553kz
Identifiers
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