Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence

• Authors: R. Kudrawiec , M. Latkowska , G. Sęk , J. Misiewicz , J. Ibáñez , M. Henini , M. Hopkinson
• Languages of publication: EN

Abstracts

EN

GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.

Keywords

EN

78.55.Cr; 78.66.Fd

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 930-932

Dates

published

2009-11

Contributors

author

R. Kudrawiec

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

M. Latkowska

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

G. Sęk

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Ibáñez

• Institut Jaume Almera, Consell Superior d'Investigacions Científiques, 08028 Barcelona, Spain

author

M. Henini

• School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

author

M. Hopkinson

• Department of Electronic and Electrical Engineering, University of Sheffield, S3 3JD Sheffield, United Kingdom

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Identifiers

DOI

10.12693/APhysPolA.116.930