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Number of results
2009 | 116 | 5 | 901-903

Article title

Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching

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EN

Abstracts

EN
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.

Keywords

Contributors

  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • MAX-Lab, Lund University, 22100 Lund, Sweden

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv116n542kz
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