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2009 | 116 | 5 | 901-903
Article title

Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching

Content
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Languages of publication
EN
Abstracts
EN
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Keywords
Year
Volume
116
Issue
5
Pages
901-903
Physical description
Dates
published
2009-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n542kz
Identifiers
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