Hole Traps in ZnTe with CdTe Quantum Dots

• Authors: E. Zielony , E. Płaczek-Popko , Z. Gumienny , J. Trzmiel , G. Karczewski , M. Guziewicz
• Languages of publication: EN

Abstracts

EN

In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.

Keywords

EN

73.61.Ga; 73.21.La; 73.20.Hb

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 73.21.La: Quantum dots
• 73.61.Ga: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 885-887

Dates

published

2009-11

Contributors

author

E. Zielony

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Płaczek-Popko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

Z. Gumienny

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Trzmiel

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. D. Bimberg, M. Grundmann, N.N. Ledenstov, Quantum Dot Heterostructures, Wiley, Chichester 1999
• 2. H. Bellakhder, A. Outzourhit, E.L. Ameziane, Thin Solid Films 382, 30 (2001)
• 3. K. Sato, S. Adachi, J. Appl. Phys. 73, 926 (1993)
• 4. K. Sato, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, T. Asahi, O. Oda, J. Cryst. Growth 214/215, 1080 (2000)
• 5. A. Continenza, S. Massidda, Phys. Rev. B 50, 11949 (1994)
• 6. B. Späth, J. Fritsche, F. Säuberlich, A. Klein, W. Jaegermann, Thin Solid Films 480-481, 204 (2005)
• 7. H. Tubota, Jpn. J. Appl. Phys. 2, 259 (1963)
• 8. M.M. Sobolev, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, Yu.G. Musikhin, Semiconductors 33, 157 (1999)
• 9. M.M. Sobolev, I.V. Kochnev, V.M. Lantratov, N.A. Cherkashin, V.V. Emstev, Physica B 273-274, 959 (1999)

Identifiers

DOI

10.12693/APhysPolA.116.885