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2009 | 116 | 5 | 885-887
Article title

Hole Traps in ZnTe with CdTe Quantum Dots

Content
Title variants
Languages of publication
EN
Abstracts
EN
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Keywords
EN
Year
Volume
116
Issue
5
Pages
885-887
Physical description
Dates
published
2009-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n536kz
Identifiers
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