Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

• Authors: V. Makhniy , S. Khusnutdinov , V. Gorley
• Languages of publication: EN

Abstracts

EN

The p-ZnO/n-ZnSe heterojunction was prepared by the photothermal oxidation of ZnSe substrate. Current- voltage characteristics are measured and discussed. The potential barrier height is equal to 3 eV at 300 K and its anomalous temperature coefficient reported here is due to the high defects concentration ( ≈ 10^{14} cm^{-2}) on the interface. It is established that forward current in p-n junction is limited by the recombination processes in the space charge region, carriers tunneling and above the barrier emission. The reverse current is determined by tunneling processes at low bias and avalanche effect at high bias.

Keywords

EN

73.40.Lq

Discipline

• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 859-861

Dates

published

2009-11

Contributors

author

V. Makhniy

• Yuri Fedkovych Chernivtsi National University, 2 Kotsybynsky Str., 58012 Chernivtsi, Ukraine

author

S. Khusnutdinov

• Yuri Fedkovych Chernivtsi National University, 2 Kotsybynsky Str., 58012 Chernivtsi, Ukraine

author

V. Gorley

• Yuri Fedkovych Chernivtsi National University, 2 Kotsybynsky Str., 58012 Chernivtsi, Ukraine

References

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• 5. B.L. Sharma, P.K. Purohit, Semiconductors Heterojunction, Pergamon Press, New York 1974
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Identifiers

DOI

10.12693/APhysPolA.116.859