Molecular Beam Epitaxy Growth for Quantum Cascade Lasers

• Authors: K. Kosiel , A. Szerling , J. Kubacka-Traczyk , P. Karbownik , E. Pruszyńska-Karbownik , M. Bugajski
• Languages of publication: EN

Abstracts

EN

The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al_{0.45}Ga_{0.55}As heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si_{3}N_{4} for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.

Keywords

EN

42.55.Px; 81.15.Hi; 85.60.-q; 85.35.Be; 73.63.-b; 63.22.-m; 72.80.Ey; 73.61.Ey; 78.66.Fd

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 78.66.Fd: III-V semiconductors
• 63.22.-m: Phonons or vibrational states in low-dimensional structures and nanoscale materials
• 42.55.Px: Semiconductor lasers; laser diodes
• 73.61.Ey: III-V semiconductors
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 806-813

Dates

published

2009-11

Contributors

author

K. Kosiel

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kubacka-Traczyk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Pruszyńska-Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.116.806