Molecular Beam Epitaxy Growth for Quantum Cascade Lasers

• Authors: K. Kosiel , A. Szerling , J. Kubacka-Traczyk , P. Karbownik , E. Pruszyńska-Karbownik , M. Bugajski
• Languages of publication: EN

Abstracts

EN

The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al_{0.45}Ga_{0.55}As heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si_{3}N_{4} for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.

Keywords

EN

42.55.Px; 81.15.Hi; 85.60.-q; 85.35.Be; 73.63.-b; 63.22.-m; 72.80.Ey; 73.61.Ey; 78.66.Fd

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 78.66.Fd: III-V semiconductors
• 63.22.-m: Phonons or vibrational states in low-dimensional structures and nanoscale materials
• 42.55.Px: Semiconductor lasers; laser diodes
• 73.61.Ey: III-V semiconductors
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 806-813

Dates

published

2009-11

Contributors

author

K. Kosiel

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szerling

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kubacka-Traczyk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Pruszyńska-Karbownik

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. C. Sirtori, GaAs Quantum Cascade Lasers: Fundamentals and Performance, EDP Sciences, 2002
• 2. C. Gmachl, F. Capasso, D.L. Sivco, A.Y. Cho, Rep. Prog. Phys. 64, 1533 (2001)
• 3. H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori, Appl. Phys. Lett. 78, 3529 (2001)
• 4. C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle, Appl. Phys. Lett. 73, 3486 (1998)
• 5. P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics, 2nd ed., Wiley, Chichester, U.K. 2005
• 6. http://www.nextnano.de
• 7. A. Wójcik-Jedlińska, M. Wasiak, K. Kosiel, M. Bugajski, Opt. Appl., in press
• 8. M. Motyka, G. Sęk, F. Janiak, K. Ryczko, J. Misiewicz, K. Kosiel, M. Bugajski, Opt. Appl., in press
• 9. K. Kosiel, J. Kubacka-Traczyk, P. Karbownik, A. Szerling, J. Muszalski, M. Bugajski, P. Romanowski, J. Gaca, M. Wójcik, Microelectron. J. 40, 565 (2009)
• 10. S. Hofling, V.D. Jovanovic, D. Indjin, J.P. Reithmaier, A. Forchel, Z. Ikonic, N. Vukmirovic, P. Harrison, Appl. Phys. Lett. 88, 251109 (2006)
• 11. Ch. Mann, Q. Yang, F. Fuchs, W. Bronner, K. Kohler, J. Wagner, IEEE J. Quantum Electron. 42, 994 (2006)
• 12. K. Kosiel, M. Bugajski, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, J. Muszalski, A. Łaszcz, P. Romanowski, M. Wasiak, W. Nakwaski, I. Makarowa, P. Perlin, Photon. Lett. Poland 1, 16 (2009)
• 13. P. Karbownik, A. Barańska, A. Szerling, W. Macherzyński, E. Papis, K. Kosiel, M. Bugajski, M. Tłaczała, R. Jakieła, Opt. Appl., in press

Identifiers

DOI

10.12693/APhysPolA.116.806