AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

• Authors: B. Boratyński , B. Paszkiewicz , R. Paszkiewicz , M. Tłaczała
• Languages of publication: EN

Abstracts

EN

AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× 10^{12} cm^{-2} and mobility of 1600 cm^{2}/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.

Keywords

EN

81.05.Hd; 85.30.De; 85.30.Tv

Discipline

• 81.05.Hd: Other semiconductors
• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.30.Tv: Field effect devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 5
• Pages: 800-805

Dates

published

2009-11

Contributors

author

B. Boratyński

• Faculty of Microsystems Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

author

B. Paszkiewicz

• Faculty of Microsystems Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

author

R. Paszkiewicz

• Faculty of Microsystems Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

author

M. Tłaczała

• Faculty of Microsystems Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

References

• 1. H. Sun, A.R. Alt, H. Benedickter, C.R. Bolognesi, IEEE Electron Device Lett. 30, 107 (2009)
• 2. B. Paszkiewicz, J. Cryst. Growth 230, 590 (2001)
• 3. B. Paszkiewicz, R. Paszkiewicz, W. Macherzynski, J. Prazmowska, A. Szyszka, M. Wosko, M. Krasowska, A. Stafiniak, M. Tlaczala, in: Proc. 13th EWMOVPE 2009, Ulm 2009, C-12, p. 253

Identifiers

DOI

10.12693/APhysPolA.116.800