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2009 | 116 | 4 | 664-667
Article title

Side-Mode-Suppression-Ratio οf Injection-Locked Fabry-Perot Lasers

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EN
Abstracts
EN
The paper deals with numerical simulation and theoretical study of injection-locked Fabry-Perot semiconductor laser diodes and their transient and steady-state properties. Motivation for this research comes from the fact that Fabry-Perot semiconductor laser diodes seem to be good candidates for transmitters applied in optical network units of new generation wavelength-division-multiplexed passive optical networks. We base our model on the full scale multimode rate equation system, which comprises all supported longitudinal modes of Fabry-Perot semiconductor laser diode, providing its high reliability and broad applicability. We analyze the influence of bias current and spontaneous emission coupling factor on injection-locking characteristics of Fabry-Perot semiconductor laser diodes and find that injection power of the master laser required to maintain an acceptable side-mode-suppression-ratio strongly depends on these parameters. The emphasis of our investigation is on spontaneous emission coupling factor, since its value is often assumed rather than thoroughly calculated or measured. As we show in the paper, variations of this parameter may affect theoretical results and their comparison with experimental data.
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Contributors
author
  • School of Electrical Engineering, University of Belgrade, Belgrade, Serbia
author
  • School of Electrical Engineering, University of Belgrade, Belgrade, Serbia
References
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  • 6. A. Murakami, K. Kawashima, K. Atsuki, IEEE J. Quantum Electron. 39, 1196 (2003)
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n466kz
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